MRF151G - CASE 375–04, STYLE 2

por: Sob Consulta

Fabricante: M/A-COM (TYCO)

Descrição:

The RF MOSFET Line

RF POWER FLELD EFFECT TRANSISTOR

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

• Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability



MRF151, MRF151-G,

Indique este produto a um(a) amigo(a)

Voltar