SI4431BDY
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DESCRIÇÃO:
PN: SI4431BDY
(MOSFET P-CH 30V 5.7A 8-SOIC)
• Product: General Purpose MOSFETs
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-Source RDS (on): 0.03 Ohm @ 10 V
• Drain-Source Breakdown Voltage: 30 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1500 mW
• Gate-Source Breakdown Voltage: 20 V
• Typical Rise Time: 10 ns
• Typical Fall Time: 47 ns
• Typical Turn-Off Delay Time: 70 ns
• Maximum Operating Temperature: + 150 C
• Package / Case: SOIC-8 Narrow
• Packaging: Reel
• Minimum Operating Temperature: - 55 C
SI 4431 B D Y, SI 4431B D Y, 4431B, 4431BD, 4431BDY
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